View irf840lcs datasheet:

PD- 93766IRF840LCS IRF840LCLHEXFET Power MOSFET Ultra Low Gate ChargeD Reduced Gate Drive RequirementVDSS = 500V Enhanced 30V VGS Rating Reduced CISS, COSS, CRSSRDS(on) = 0.85 Extremely High Frequency OperationG Repetitive Avalanche RatedID = 8.0ADescription SThis new series of low charge HEXFET power MOSFETsachieve significant lower gate charge over conventionalMOSFETs. Utilizing the new LCDMOS (low chargedevice MOSFETs) technology, the device improvementsare achieved without added product cost, allowing forreduce gate drive requirements and total system savings.In addition, reduced switching losses and improvedefficiency and achievable in a variety of high frequencyapplications. Frequencies of a few MHz at high currentare possible using the new low charge MOSFETs.These device improvements combined with the provenD2Pak TO-2

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