View irf840s datasheet:

SMD Type MOSFETN-Channel MOSFETIRF840S (KRF840S) Features VDS (V) =500V ID =8 A (VGS = 10V) RDS(ON) 0.85 (VGS = 10V) Fast switching Low thermal resistancedgs Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 500V Gate-Source Voltage VGS 20 Ta = 25 8 Continuous Drain Current ID Ta = 100 5.1A Pulsed Drain Current IDM 32 Avalanche Current IAR 8 Tc = 25 125 Power Dissipation PD W Ta = 25 3.1 Non-Repetitive Avalanche Energy (Note.1) EAS 510mJ Repetitive Avalanche Energy EAR 13 Peak Diode Recovery dv/dt (Note.2) dv/dt 3.5 V/ns Thermal Resistance.Junction- to-Ambient RthJA 60/W Thermal Resistance Junction to Mounting Base RthJB 0.85 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150Note.1: L = 14mH, IAS = 8A, VDD

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