View irfb3004 datasheet:

isc N-Channel MOSFET Transistor IRFB3004,IIRFB3004FEATURESStatic drain-source on-resistance:RDS(on) 1.75mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHard Switched and High Frequency CircuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 40 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 340 ADI Drain Current-Single Pulsed 1310 ADMP Total Dissipation @T =25 380 WD CT Max. Operating Junction Temperature 175 jT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(ch-c) 0.4Channel-to-

Keywords - ALL TRANSISTORS DATASHEET

 irfb3004.pdf Design, MOSFET, Power

 irfb3004.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfb3004.pdf Database, Innovation, IC, Electricity