All Transistors. Datasheet

 

View irfb3206 datasheet:

irfb3206irfb3206

isc N-Channel MOSFET Transistor IRFB3206,IIRFB3206FEATURESStatic drain-source on-resistance:RDS(on) 3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHard Switched and High Frequency CircuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 210 ADI Drain Current-Single Pulsed 840 ADMP Total Dissipation @T =25 300 WD CT Max. Operating Junction Temperature 175 jT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(ch-c) 0.5Channel-to-ambien

 

Keywords - ALL TRANSISTORS DATASHEET

 irfb3206.pdf Design, MOSFET, Power

 irfb3206.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfb3206.pdf Database, Innovation, IC, Electricity

 

 
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