View irfb3207zgpbf datasheet:

PD - 96201IRFB3207ZGPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification inSMPSDVDSS 75Vl Uninterruptible Power SupplyRDS(on) typ. 3.3ml High Speed Power Switching max. 4.1ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 170AID (Package Limited)S 120ABenefitsDl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanche SOASDl Enhanced body diode dV/dt and dI/dtGCapabilityTO-220ABl Lead-FreeIRFB3207ZGPbFl Halogen-FreeGDSGate Drain SourceAbsolute Maximum RatingsSymbol Parameter Max. UnitsID @ TC = 25CContinuous Drain Current, VGS @ 10V (Silicon Limited) 170ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) 120AID @ TC = 25C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 120IDMPulsed Drain

Keywords - ALL TRANSISTORS DATASHEET

 irfb3207zgpbf.pdf Design, MOSFET, Power

 irfb3207zgpbf.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfb3207zgpbf.pdf Database, Innovation, IC, Electricity