All Transistors. Datasheet

 

View irfb3306 datasheet:

irfb3306irfb3306

isc N-Channel MOSFET Transistor IRFB3306IIRFB3306FEATURESStatic drain-source on-resistance:RDS(on) 4.2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh efficiency synchronous rectification in SMPSUninterrruptible power supplyHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 110 ADI Drain Current-Single Pulsed 620 ADMP Total Dissipation @T =25 230 WD CT Max. Operating Junction Temperature 175 jT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(ch-c) 0.65Channel-to-ambient therma

 

Keywords - ALL TRANSISTORS DATASHEET

 irfb3306.pdf Design, MOSFET, Power

 irfb3306.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfb3306.pdf Database, Innovation, IC, Electricity

 

 
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