All Transistors. Datasheet

 

View irfb3407z datasheet:

irfb3407zirfb3407z

isc N-Channel MOSFET Transistor IRFB3407ZIIRFB3407ZFEATURESStatic drain-source on-resistance:RDS(on) 5.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 120 ADI Drain Current-Single Pulsed 488 ADMP Total Dissipation @T =25 230 WD CT Max. Operating Junction Temperature 175 jT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(ch-c) 0.65Channel-to-ambient thermal resistance/WRth(ch-a) 621isc websiteww

 

Keywords - ALL TRANSISTORS DATASHEET

 irfb3407z.pdf Design, MOSFET, Power

 irfb3407z.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfb3407z.pdf Database, Innovation, IC, Electricity

 

 
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