View irfb3806 datasheet:

isc N-Channel MOSFET Transistor IRFB3806IIRFB3806FEATURESStatic drain-source on-resistance:RDS(on) 15.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for High speed power switching and high efficiencysynchronous rectification in SMPSABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 43 ADI Drain Current-Single Pulsed 170 ADMP Total Dissipation @T =25 71 WD CT Max. Operating Junction Temperature 175 jT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(ch-c) 2.12Channel-to-ambient thermal resistance/W

Keywords - ALL TRANSISTORS DATASHEET

 irfb3806.pdf Design, MOSFET, Power

 irfb3806.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfb3806.pdf Database, Innovation, IC, Electricity