View irfb38n20d datasheet:

isc N-Channel MOSFET Transistor IRFB38N20DIIRFB38N20DFEATURESStatic drain-source on-resistance:RDS(on) 54mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 200 VDSSV Gate-Source Voltage 30 VGSI Drain Current-Continuous 43 ADI Drain Current-Single Pulsed 180 ADMP Total Dissipation @T =25 300 WD CT Max. Operating Junction Temperature 175 jT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(ch-c) 0.47Channel-to-ambient thermal resistance/WRth(ch-a) 621isc websitewww.iscsemi.cn isc & iscsem

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