View irfb4227pbf datasheet:

PD - 97035DIRFB4227PbFFeaturesKey Parametersl Advanced Process TechnologyVDS max 200 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ. 240 Vl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 19.7 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 130 A and Pass Switch ApplicationsTJ max 175 Cl Low QG for Fast Responsel High Repetitive Peak Current Capability forD Reliable OperationDl Short Fall & Rise Times for Fast Switchingl175C Operating Junction Temperature for Improved RuggednessGSl Repetitive Avalanche Capability for RobustnessD and Reliability GSl Class-D Audio Amplifier 300W-500WTO-220AB (Half-bridge)GDSGate Drain SourceDescriptionThis HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switcha

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