View irfp260n datasheet:

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP260NIIRFP260NFEATURESStatic drain-source on-resistance:RDS(on)40mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 200 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 50 ADI Drain Current-Single Pulsed 200 ADMP Total Dissipation @T =25 300 WD CT Max. Operating Junction Temperature 175 jStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 0.5Channel-to-ambient thermal resistance/WRth(j-a) 401isc websitewww.iscsemi.cn isc & iscs

Keywords - ALL TRANSISTORS DATASHEET

 irfp260n.pdf Design, MOSFET, Power

 irfp260n.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfp260n.pdf Database, Innovation, IC, Electricity