View irfp260npbf datasheet:

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFP260NPBFFEATURESWith TO-247 packagingEase of parallelingHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 200 VDSSV Gate-Source Voltage 20 VGSSDrain Current-Continuous@T =25C 50I AD35T =100CI Drain Current-Single Pulsed 200 ADMTotal Dissipation @T =25CP 300 WDT =100CT Operating Junction Temperature -55~175 jStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 0.5/WRth(ch-a) Channel-to-ambient th

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