View irfp32n50k datasheet:

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP32N50KFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV Gate-Source Voltage 30 VGSSDrain Current-Continuous@Tc=2532I AD20Tc=100I Drain Current-Single Pulsed 130 ADMP Total Dissipation 460 WDT Operating Junction Temperature -55~150 jT Storage Temperature -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 0.261isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkINCHANGE Semiconductorisc N-Channel M

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