View irfp350a datasheet:

IRFP350AFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 17 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current: 10A (Max.) @ VDS = 400V Low RDS(ON): 0.254 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V400Continuous Drain Current (TC=25C)17IDAContinuous Drain Current (TC=100C) 10.8IDM Drain Current-Pulsed (1)68 AVGS Gate-to-Source Voltage30 VEAS Single Pulsed Avalanche Energy (2)1156 mJIAR Avalanche Current (1)17 AEAR Repetitive Avalanche Energy (1)20.2 mJdv/dt Peak Diode Recovery dv/dt (3)4.0 V/nsTotal Power Dissipation (TC=25C) 202 WPDLinear Derating Factor1.61 W/COperating Junction andTJ

Keywords - ALL TRANSISTORS DATASHEET

 irfp350a.pdf Design, MOSFET, Power

 irfp350a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfp350a.pdf Database, Innovation, IC, Electricity