View irfz24n datasheet:

PD - 91354AIRFZ24NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.07 Fully Avalanche RatedGDescriptionID = 17ASFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon area. This benefit, combined with the fastswitching speed and ruggedized device design that HEXFETpower MOSFETs are well known for, provides the designerwith an extremely efficient device for use in a wide varietyof applications.The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermal resistanceTO-220ABand low package cost of the TO-220 contribute to its wideacceptance throu

Keywords - ALL TRANSISTORS DATASHEET

 irfz24n.pdf Design, MOSFET, Power

 irfz24n.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfz24n.pdf Database, Innovation, IC, Electricity