View irfz24n 1 datasheet:

Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 17 Afeatures very low on-state resistance Ptot Total power dissipation 45 Wand has integral zener diodes giving Tj Junction temperature 175 CESD protection up to 2kV. It is RDS(ON) Drain-source on-state 70 mintended for use in switched mode resistance VGS = 10 Vpower supplies and general purposeswitching applications.PINNING - TO220AB PIN CONFIGURATION SYMBOLPIN DESCRIPTIONdtab1 gate2 draing3 sourcetab drains1 2 3LIMITING VALUESLimiting values in accordance with the Absolute Maxim

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