View irfz24npbf datasheet:

IRFZ24NPbF l Advanced Process TechnologyDl Dynamic dv/dt Ratingl 175C Operating Temperature DSS l Fast Switchingl Fully Avalanche Rated DS(on) Gl Lead-FreeDescription D SFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon area. This benefit, combined with the fastswitching speed and ruggedized device design that HEXFETpower MOSFETs are well known for, provides the designerwith an extremely efficient device for use in a wide varietyof applications.The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermal resistanceTO-220ABand low package cost of the TO-220 contribute to its wide

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