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View irfz24nspbf datasheet:

irfz24nspbfirfz24nspbf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ24NSPbFFEATURESWith TO-263(D2PAK) packagingSurface mountHigh speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-Source Voltage 20 VGSSDrain Current-Continuous@T =25C 17I AD12T =100CI Drain Current-Single Pulsed 68 ADMP Total Dissipation 45 WDT Operating Junction Temperature -55~175 jStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 3.3/WRth(ch-a) Channel-to-ambient thermal resistance 401isc websitewww.iscsemi.cn isc & iscsemi is regi

 

Keywords - ALL TRANSISTORS DATASHEET

 irfz24nspbf.pdf Design, MOSFET, Power

 irfz24nspbf.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfz24nspbf.pdf Database, Innovation, IC, Electricity

 

 
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