View irfz34n datasheet:

PD -9.1276CIRFZ34NHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.040 Fast SwitchingG Ease of ParallelingID = 29ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achievethe lowest possible on-resistance per silicon area.This benefit, combined with the fast switching speedand ruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designerwith an extremely efficient device for use in a widevariety of applications.The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermalTO-220ABresistance and low package cost of the TO-220contribute to its wide accept

Keywords - ALL TRANSISTORS DATASHEET

 irfz34n.pdf Design, MOSFET, Power

 irfz34n.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfz34n.pdf Database, Innovation, IC, Electricity