View irfz34npbf datasheet:

PD - 94807IRFZ34NPbFHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.040 Fast SwitchingG Ease of ParallelingID = 29A Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve the lowest possible on-resistance persilicon area. This benefit, combined with the fast switching speed andruggedized device design that HEXFET Power MOSFETs are well known for,provides the designer with an extremely efficient device for use in a wide varietyof applications.The TO-220 package is universally preferred for all commercial-industrialTO-220ABapplications at power dissipation levels to approximately 50 watts. The lowthermal resistance and low package cost of the TO-220 contribute to its wi

Keywords - ALL TRANSISTORS DATASHEET

 irfz34npbf.pdf Design, MOSFET, Power

 irfz34npbf.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfz34npbf.pdf Database, Innovation, IC, Electricity