View irfz44e datasheet:

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44E IIRFZ44EFEATURESStatic drain-source on-resistance:RDS(on) 23mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 48 ADI Drain Current-Single Pulsed 192 ADMP Total Dissipation @T =25 110 WD CT Max. Operating Junction Temperature 175 jStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(ch-c) 1.4Channel-to-ambient thermal resistance/WRth(ch-a) 62

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