View irfz44epbf datasheet:

PD - 94822IRFZ44EPbFHEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating DVDSS = 60V 175C Operating Temperature Fast SwitchingRDS(on) = 0.023 Fully Avalanche RatedG Lead-FreeID = 48ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed and ruggedized device designthat HEXFET Power MOSFETs are well known for, provides the designer withan extremely efficient and reliable device for use in a wide variety of applications.The TO-220 package is universally preferred for all commercial-industrialapplications at power dissipation levels to approximately 50 watts. The lowthermal resistance and low package cost of the TO-220 contribute to its wideacceptance throughout th

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