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irfz44esirfz44es

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44ESFEATURESWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VDSSV Gate-Source Voltage 20 VGSSDrain Current-Continuous@T =25C 48I AD34T =100CI Drain Current-Single Pulsed 192 ADMP Total Dissipation 110 WDT Operating Junction Temperature -55~175 jStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 1.4/WRth(ch-a) Channel-to-ambient thermal resistanc

 

Keywords - ALL TRANSISTORS DATASHEET

 irfz44es.pdf Design, MOSFET, Power

 irfz44es.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfz44es.pdf Database, Innovation, IC, Electricity

 

 
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