View irfz44ns 1 datasheet:

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a surface mounting VDS Drain-source voltage 55 Vplastic envelope using trench ID Drain current (DC) 49 Atechnology. The device features very Ptot Total power dissipation 110 Wlow on-state resistance and has Tj Junction temperature 175 Cintegral zener diodes giving ESD RDS(ON) Drain-source on-state 22 mprotection up to 2kV. It is intended for resistance VGS = 10 Vuse in switched mode power suppliesand general purpose switchingapplications.PINNING - SOT404 (D2PAK) PIN CONFIGURATION SYMBOLPIN DESCRIPTIONdmb1 gate2 draing3 source2mb drains1 3LIMITING VALUESLimiting values in accordan

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