View irfz44vp datasheet:

IRFZ44VPwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50DTO-220ABGSDSGN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Source Voltage 20 VTC = 25 C60IDContinuous Drain Current (TJ = 175 C)bTC = 100 C50aIDMPulsed Drain Current 200 AISContinuous Source Current (Diode Conduction)50aIASAvalanche Current 50Single Avalanche Energy (Duty Cycle 1 %) L = 0.1 mH EAS125 mJTC = 25 C136PDMaximum Power Dissipation WTA = 25 C3b, 8.3b, c TJ, TstgOperating Junction and Storage Temperature Range - 55 to 175 CTHERMAL RESISTANCE RATINGS Parameter

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