All Transistors. Datasheet

 

View irfz46n datasheet:

irfz46nirfz46n

PD-91277IRFZ46NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 16.5mG Fast Switching Fully Avalanche RatedID = 53ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermalresistance and low package cost of the TO-220 contributeTO-220ABto its

 

Keywords - ALL TRANSISTORS DATASHEET

 irfz46n.pdf Design, MOSFET, Power

 irfz46n.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfz46n.pdf Database, Innovation, IC, Electricity

 

 
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