View irg6s330u datasheet:

PD - 96217APDP TRENCH IGBTIRG6S330UPbFKey ParametersFeaturesVCE min330 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 70Al Optimized for Sustain and Energy Recovery 1.80 Vcircuits in PDP applicationsIRP max @ TC= 25C250 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl Lead Free packageCECGGD2PakEIRG6S330UPbFn-channelGC EGate Collector EmitterDescriptionThis IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advancedtrench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panelefficiency. Additional features are 150C operating junction temperature and high repetitive peak currentcapability. These features combine to make this IGBT a highly ef

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