View irg7i313u datasheet:

PD - 97411IRG7I313UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min330 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 20A1.35 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C160 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl Lead Free packageCEG CGE TO-220 Full-PakIRG7I313UPbFn-channelGC EG ate C ollector Em itterDescriptionThis IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advancedtrench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panelefficiency. Additional features are 150C operating junction temperature and high repetitive peak currentcapability. These features combine to make this IGBT

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