View irg7ph30k10 datasheet:

PD - 96156AIRG7PH30K10PbFINSULATED GATE BIPOLAR TRANSISTORFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 1200V Low Switching Losses Maximum Junction Temperature 175 CIC = 23A, TC = 100C 10 S short Circuit SOA Square RBSOA GtSC 10s, TJ(max) =175C 100% of the parts tested for ILM E Positive VCE (ON) Temperature Co-EfficientVCE(on) typ. = 2.05V Tight Parameter Distributionn-channel Lead Free PackageCECBenefitsG High Efficiency in a Wide Range of Applications Suitable for a Wide Range of Switching Frequencies due toTO-247ACLow VCE (ON) and Low Switching Losses Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel OperationGC EGate Collector EmitterAbsolute Maximum RatingsParameter Max. UnitsVCESCollector-to-Emitter Voltage

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