View irg7ph30k10d datasheet:

PD - 97403IRG7PH30K10DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 1200V Low switching losses 10 S short circuit SOAIC = 16A, TC = 100C Square RBSOA 100% of the parts tested for ILM G tSC 10s, TJ(max) = 150C Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak DiodeEVCE(on) typ. = 2.05V Tight parameter distributionn-channel Lead Free PackageCBenefits High Efficiency in a wide range of applicationsE Suitable for a wide range of switching frequencies due toCGLow VCE (ON) and Low Switching losses Rugged transient Performance for increased reliability Excellent Current sharing in parallel operationTO-247ACGC EGate Collector EmitterAbsolute Maximum RatingsParameter Max. Uni

Keywords - ALL TRANSISTORS DATASHEET

 irg7ph30k10d.pdf Design, MOSFET, Power

 irg7ph30k10d.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irg7ph30k10d.pdf Database, Innovation, IC, Electricity