View irg7ph42ud1 datasheet:

IRG7PH42UD1PbFIRG7PH42UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA I NOMINAL = 30A Ultra-low VF DiodeG 1300Vpk repetitive transient capacityTJ(max) = 150C 100% of the parts tested for ILM E Positive VCE (ON) temperature co-efficientVCE(on) typ. = 1.7Vn-channel Tight parameter distribution Lead free packageG G BenefitsE E Device optimized for induction heating and soft switching C C G G applications High Efficiency due to Low VCE(on), low switching lossesTO-247AC TO-247ADand Ultra-low VFIRG7PH42UD1PbF IRG7PH42UD1-EP Rugged transient performance for increased reliability Excellent current sharing in parallel oper

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