View irg7ph42ud1m datasheet:

IRG7PH42UD1MPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C Ultra-low VF DiodeTJ(max) = 150C 1300Vpk repetitive transient capacityG 100% of the parts tested for ILM VCE(on) typ. = 1.7V @IC= 30A Positive VCE (ON) temperature co-efficientE Tight parameter distributionn-channel Lead free packageBenefitsG Device optimized for induction heating and soft switching applications High Efficiency due to Low VCE(on), low switching lossesand Ultra-low VFE C Rugged transient performance for increased reliabilityG Excellent current sharing in parallel operation Low EMITO-247ADG C EGate Collector EmitterBas

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