All Transistors. Datasheet

 

View irg7sc12f datasheet:

irg7sc12firg7sc12f

PD - 96363IRG7SC12FPbFINSULATED GATE BIPOLAR TRANSISTORCFeaturesVCES = 600V Low VCE (ON) Trench IGBT Technology Maximum Junction temperature 150 CIC = 8A, TC = 100C 3 S short circuit SOA Square RBSOA GtSC 3s, TJ(max) = 150C Positive VCE (ON) Temperature co-efficientE Tight parameter distributionVCE(on) typ. = 1.60V Lead Free Packagen-channelCBenefitsEG High Efficiency in a HVAC, Refrigerator applications Rugged transient Performance for increased reliabilityD2PakIRG7SC12FPbF Excellent Current sharing in parallel operation Low EMIG C EGate Collector EmitterAbsolute Maximum RatingsParameter Max. UnitsVCES Collector-to-Emitter Voltage 600 VIC @ TC = 25C Continuous Collector Current 24IC @ TC = 100C Continuous Collector Current 13INOMINAL ANominal Current 8ICM Pulse

 

Keywords - ALL TRANSISTORS DATASHEET

 irg7sc12f.pdf Design, MOSFET, Power

 irg7sc12f.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irg7sc12f.pdf Database, Innovation, IC, Electricity

 

 
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