View irg8b08n120kd datasheet:

IRG8B08N120KDPbF IRG8P08N120KDPbF IRG8P08N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 8A, TC =100C tSC 10s, TJ(max) = 150C E C GE C E VCE(ON) typ. = 1.7V @ IC = 5A G C G G ETO-247AD TO-220AB TO-247AC IRG8P08N120KD-EPbF Applications IRG8B08N120KDPbF IRG8P08N120KDPbF n-channel Industrial Motor Drive UPS G C E Solar Inverters Gate Collector Emitter Welding Features BenefitsBenchmark Low VCE(ON) High Efficiency in a Motor Drive Applications 10s Short Circuit SOA Increases margin for short circuit protection scheme Positive VCE(ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation Square RBSOA and high ILM- rating Rugged Transient Performance Lead-Free, RoHS compliant Environmentally friendly Base part number Packa

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