View irgb4610d datasheet:

IRGR4610DPbFIRGS4610DPbFIRGB4610DPbFInsulated Gate Bipolar Transistor with Ultrafast Soft Recovery DiodeC CVCES = 600VCCIC = 10A, TC = 100CEEECG GGGtsc > 5s, Tjmax = 175CD-PakE D2-Pak TO-220ABVCE(on) typ. = 1.7V @ 6A IRGR4610DPbFIRGS4610DPbF IRGB4610DPbFn-channelGCEApplicationsGate Collector Emitter Appliance Drives Inverters UPSFeatures BenefitsLow VCE(ON) and switching losses High efficiency in a wide range of applications and switching frequenciesImproved reliability due to rugged hard switching performance and higher Square RBSOA and maximum junction temperature 175Cpower capabilityPositive VCE(ON) temperature coefficient and tighter distribution of Excellent current sharing in parallel operationparameters5s short circuit SOA Enables short circuit protection schemeLead-free, RoHS comp

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