View irgib10b60kd1 datasheet:

PD-94576AIRGIB10B60KD1INSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 10A, TC=100C Low Diode VF. 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient.E Maximum Junction Temperature Rated at 175CVCE(on) typ. = 1.7Vn-channelBenefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation.TO-220Full-PakAbsolute Maximum RatingsParameter Max. UnitsVCES Collector-to-Emitter Voltage 600 VIC @ TC = 25C Continuous Collector Current 16IC @ TC = 100C Continuous Collector Current 10 AICM Pulse Collector Current (Ref.Fig.C.T.5)

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