View irgp20b120u-e datasheet:

PD- 94117IRGP20B120U-EINSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBTFeatures UltraFast Non Punch Through (NPT)CTechnology 10 s Short Circuit capability VCES = 1200V Square RBSOA Positive VCE(on) Temperature CoefficientVCE(on) typ. = 3.05VG Extended lead TO-247 packageVGE = 15V, IC = 20A, 25CEBenefitsn-channel Benchmark efficiency above 20KHz Optimized for Welding, UPS, and Induction Heatingapplications Rugged with UltraFast performance Low EMI Significantly Less Snubber required Excellent Current sharing in Parallel operation Longer leads for easier mountingTO-247ADAbsolute Maximum Ratings Parameter Max. UnitsVCES Collector-to-Emitter Breakdown Voltage 1200 VIC @ TC = 25C Continuous Collector Current (Fig.1) 40IC @ TC = 100C Continuous Collector Current (Fig.1) 20 A

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