All Transistors. Datasheet

 

View irgp20b120ud-e datasheet:

irgp20b120ud-eirgp20b120ud-e

PD- 93817IRGP20B120UD-E UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 1200V UltraFast Non Punch Through (NPT)TechnologyVCE(on) typ. = 3.05V Low Diode VF (1.67V Typical @ 20A & 25C) 10 s Short Circuit Capability G Square RBSOA VGE = 15V, IC = 20A, 25C UltraSoft Diode Recovery Characteristics E Positive VCE(on) Temperature CoefficientN-channel Extended Lead TO-247AD PackageBenefits Benchmark Efficiency Above 20KHz Optimized for Welding, UPS, and Induction HeatingApplications Rugged with UltraFast Performance Low EMI Significantly Less Snubber Required Excellent Current Sharing in Parallel Operation Longer Leads for Easier MountingTO-247ADAbsolute Maximum Ratings Parameter Max. UnitsVCES Collector-to-Emitter B

 

Keywords - ALL TRANSISTORS DATASHEET

 irgp20b120ud-e.pdf Design, MOSFET, Power

 irgp20b120ud-e.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irgp20b120ud-e.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.