View irgp30b60kd-e datasheet:

PD - 94388BIRGP30B60KD-EINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC VCES = 600V Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10s Short Circuit Capability.IC = 30A, TC=100C Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.Gtsc > 10s, TJ=150C Positive VCE (on) Temperature Coefficient. TO-247AD PackageEVCE(on) typ. = 1.95Vn-channelBenefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation.TO-247ADAbsolute Maximum Ratings Parameter Max. UnitsVCES Collector-to-Emitter Voltage 600 VIC @ TC = 25C Continuous Collector Current 60IC @ TC = 100C Continuous Collector Current 30ICM Pulsed Collector Current 120ILM Clamped Inductive Load Current 120 AIF

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