View irgp4062d-e datasheet:

IRGB4062DPbFIRGP4062DPbFIRGP4062D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V Low VCE (ON) Trench IGBT Technology Low switching lossesIC = 24A, TC = 100C Maximum Junction temperature 175 C 5 S short circuit SOAG tSC 5s, TJ(max) = 175C Square RBSOA 100% of the parts tested for ILM EVCE(on) typ. = 1.65V Positive VCE (ON) Temperature co-efficientn-channel Ultra fast soft Recovery Co-Pak Diode Tight parameter distributionC C C Lead Free PackageBenefitsEE High Efficiency in a wide range of applicationsECCC G Suitable for a wide range of switching frequencies due to GGLow VCE (ON) and Low Switching losses Rugged transient Performance for increased reliabilityTO-220AB TO-247AC TO-247ADIRGB4062DPbF IRGP4062DPbF IRGP40

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