View irgp4066-e datasheet:

PD - 97577IRGP4066PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4066-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 75A 5 S short circuit SOA Square RBSOA GtSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILME Positive VCE (ON) Temperature CoefficientVCE(on) typ. = 1.7V Tight Parameter Distributionn-channel Lead Free PackageCCBenefits High Efficiency in a Wide Range of Applications Suitable for a Wide Range of Switching Frequencies due toE ECCLow VCE (ON) and Low Switching LossesGG Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel OperationTO-247AC TO-247ADIRGP4066PbF IRGP4066-EPbFG C EGate Collector EmitterAbsolute Maximum RatingsParame

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