View irgp4069-e datasheet:

PD - 97426IRGP4069PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4069-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOA GtSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILME Positive VCE (ON) Temperature CoefficientVCE(on) typ. = 1.6V Tight Parameter Distributionn-channel Lead Free PackageCCBenefits High Efficiency in a Wide Range of Applications Suitable for a Wide Range of Switching Frequencies due toLow VCE (ON) and Low Switching LossesEECC Rugged Transient Performance for Increased Reliability GG Excellent Current Sharing in Parallel OperationTO-247AC TO-247ADIRGP4069PbF IRGP4069-EPbFG C EGate Collector EmitterAbsolute Maximum RatingsParame

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