All Transistors. Datasheet

 

View irgps40b120u datasheet:

irgps40b120uirgps40b120u

PD- 94295DIRGPS40B120UINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCVCES = 1200VFeatures Non Punch Through IGBT Technology. 10s Short Circuit Capability.VCE(on) typ. = 3.12V Square RBSOA. Positive VCE (on) Temperature Coefficient.G@ VGE = 15V, Super-247 Package.En-channel ICE = 40A, Tj=25CBenefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Significantly Less Snubber Required Excellent Current Sharing in Parallel Operation.Super-247Absolute Maximum Ratings Parameter Max. UnitsVCES Collector-to-Emitter Voltage 1200 VIC @ TC = 25C Continuous Collector Current 80IC @ TC = 100C Continuous Collector Current 40ICM Pulsed Collector Current 160 AILM Clamped Inductive Load Current 160VGE Gate-to-Emitter Voltage 20 VPD @ TC = 25C Maximum Power Dissi

 

Keywords - ALL TRANSISTORS DATASHEET

 irgps40b120u.pdf Design, MOSFET, Power

 irgps40b120u.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irgps40b120u.pdf Database, Innovation, IC, Electricity

 

 
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