All Transistors. Datasheet

 

View irgs15b60k datasheet:

irgs15b60kirgs15b60k

PD - 96358IRGS15B60KPbFINSULATED GATE BIPOLAR TRANSISTORFeatures CVCES = 600V Low VCE (on) Non Punch Through IGBT Technology.IC = 15A, TC=100C 10s Short Circuit Capability.G Square RBSOA. Positive VCE (on) Temperature Coefficient. tsc > 10s, TJ=150CE Lead-Freen-channelVCE(on) typ. = 1.8VBenefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation.D2PakIRGS15B60KPbFAbsolute Maximum RatingsParameter Max. UnitsVCESCollector-to-Emitter Voltage 600 VIC @ TC = 25CContinuous Collector Current 31IC @ TC = 100CContinuous Collector Current 15AICMPulse Collector Current Vge = 15V 62ILM Clamped Inductive Load Current Vge = 20V 62VGE VContinuous Gate-to-Emitter Voltage 20PD @ TC = 25C Maximum Power Dissipat

 

Keywords - ALL TRANSISTORS DATASHEET

 irgs15b60k.pdf Design, MOSFET, Power

 irgs15b60k.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irgs15b60k.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.