View irgsl10b60kd datasheet:

PD - 94925IRGB10B60KDPbFIRGS10B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL10B60KDULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.IC = 12A, TC=100C 10s Short Circuit Capability. Square RBSOA.G Ultrasoft Diode Reverse Recovery Characteristics.tsc > 10s, TJ=150C Positive VCE (on) Temperature Coefficient. Lead-Free (only the TO-220AB version is currentlyE available in a Lead-Free configuration)VCE(on) typ. = 1.8Vn-channelBenefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation.TO-220AB D2Pak TO-262IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KDAbsolute Maximum Ratings Parameter Max. UnitsVCES Collector-to-Emitter Voltage 600 VIC @ TC = 25C Contin

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