View irgsl6b60k datasheet:

PD - 94575AIRGB6B60KIRGS6B60KINSULATED GATE BIPOLAR TRANSISTORIRGSL6B60KCVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. 10s Short Circuit Capability.IC = 7.0A, TC=100C Square RBSOA. Positive VCE (on) Temperature Coefficient.Gtsc > 10s, TJ=150CEVCE(on) typ. = 1.8Vn-channelBenefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation.TO-220AB D2Pak TO-262IRGB6B60K IRGS6B60K IRGSL6B60KAbsolute Maximum Ratings Parameter Max. UnitsVCES Collector-to-Emitter Voltage 600 VIC @ TC = 25C Continuous Collector Current 13 AIC @ TC = 100C Continuous Collector Current 7.0ICM Pulsed Collector Current 26ILM Clamped Inductive Load Current 26VGE Gate-to-Emitter Voltage 20 VPD @ TC = 25C Maximum Power Dis

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