View irgsl6b60kd datasheet:

PD - 94381EIRGB6B60KDIRGS6B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL6B60KDULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.IC = 7.0A, TC=100C 10s Short Circuit Capability. Square RBSOA.G Ultrasoft Diode Reverse Recovery Characteristics.tsc > 10s, TJ=150C Positive VCE (on) Temperature Coefficient.EVCE(on) typ. = 1.8Vn-channelBenefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation.TO-220AB D2Pak TO-262IRGB6B60KD IRGS6B60KD IRGSL6B60KDAbsolute Maximum Ratings Parameter Max. UnitsVCES Collector-to-Emitter Voltage 600 VIC @ TC = 25C Continuous Collector Current 13IC @ TC = 100C Continuous Collector Current 7.0ICM Pulsed Collector Current

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