All Transistors. Datasheet

 

View ixgr32n60cd1 datasheet:

ixgr32n60cd1ixgr32n60cd1

VCES = 600 VHiPerFASTTM IGBT IXGR 32N60CD1IC25 = 45 Awith DiodeVCE(SAT) = 2.7 VISOPLUS247TMtfi(typ) = 55 ns(Electrically Isolated Backside)Preliminary data sheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TM (IXGR)E 153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25C45 AEIsolated backside*IC90 TC = 90C28 AICM TC = 25C, 1 ms 120 ASSOA VGE = 15 V, TVJ = 125C, RG = 10 ICM = 64 AG = Gate, C = Collector,(RBSOA) Clamped inductive load, L = 100 H @ 0.8 VCESE = Emitter, TAB = CollectorPC TC = 25C 140 WTJ -55 ... +150 C * Patent pendingTJM 150 CFeaturesTstg -55 ... +150 CMaximum Lead and Tab temperature for soldering 300 C DCB Isolated mounting tab1.6 mm (0.062 in.) from case for 10 s Meets TO-247AD package

 

Keywords - ALL TRANSISTORS DATASHEET

 ixgr32n60cd1.pdf Design, MOSFET, Power

 ixgr32n60cd1.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixgr32n60cd1.pdf Database, Innovation, IC, Electricity

 

 
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