View ixgr32n90b2d1 datasheet:

Advance Technical InformationVCES = 900 VIXGR 32N90B2D1HiPerFASTTM IGBTIC25 = 47 Awith Fast DiodeVCE(sat) = 2.9 Vtfi typ = 150 nsElectrically Isolated BaseSymbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR)E153432VCES TJ = 25OC to 150OC 900 VVCGR TJ = 25OC to 150OC; RGE = 1 M 900 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25OC47 A ISOLATED TABEIC110 TC = 110OC22 AG = Gate C = CollectorE = EmitterICM TC = 25OC, 1 ms 200 ASSOA VGE= 15 V, TVJ = 125OC, RG = 10 ICM = 64 AFeatures(RBSOA) Clamped inductive load: VCL

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