View ixgx120n60b datasheet:

HiPerFASTTM IGBTs VCES = 600VIXGK120N60BIC90 = 120AIXGX120N60BVCE(sat) 2.1VTO-264 (IXGK)GSymbol Test Conditions Maximum RatingsCEVCES TJ = 25C to 150C 600 VTabVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VPLUS247 (IXGX)VGEM Transient 30 VIC25 TC = 25C ( Chip Capability ) 200 AIC90 TC = 90C 120 AILRMS Terminal Current Limit 76 AGICM TC = 25C, 1ms 300 ACTabESSOA VGE= 15V, TVJ = 125C, RG = 2.4 ICM = 200 A(RBSOA) Clamped Inductive Load @ 0.8 VCES VG = Gate E = EmitterC = Collector Tab = CollectorPC TC = 25C 660 WTJ -55 ... +150 CTJM 150 CFeaturesTstg -55 ... +150 C Very High Current, Fast Switching IGBT TL Maximum Lead Temperature for Soldering 300 C Low VCE(sat)TSOLD 1.6 mm (0.062 in.) from Case for 10 260 C - for Minimum On-State Conduction

Keywords - ALL TRANSISTORS DATASHEET

 ixgx120n60b.pdf Design, MOSFET, Power

 ixgx120n60b.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixgx120n60b.pdf Database, Innovation, IC, Electricity